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CXMT has achieved a significant milestone in its research and development efforts concerning the 4F² DRAM architecture. At a recent industry conference, President Cao Kanyu highlighted the company’s technological advancements in DRAM devices, the 4F² architecture, and hybrid bonding techniques. He also revealed plans to introduce a new generation of DDR5 RDIMM products, which will incorporate these cutting-edge technologies, by the end of this year. The 4F² architecture stands out for its ability to boost storage density per unit area, marking a pivotal advancement in DRAM technology. Furthermore, CXMT’s proprietary VSG (Vertical Surrounding Gate) transistor addresses challenges inherent in traditional manufacturing processes. Meanwhile, its hybrid bonding technology enhances connection density, laying the groundwork for seamless chip integration.
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