On September 20, 2026, at the 2026 World Manufacturing Convention, ChangXin Memory Technologies made a groundbreaking announcement: the official launch of mass production for its cutting-edge fifth-generation DRAM technology platform, known as the G5 platform. Alongside this announcement, the company proudly unveiled two LPDDR5X products that have already entered mass production, both developed on this advanced platform.
Each of these products boasts a remarkable single-chip capacity of 24GB, marking a significant 50% increase compared to the previous generation. They are ideally suited for mid-to-high-end smartphones, portable consumer electronics, and a variety of other applications.
The G5 platform stands out for its utilization of innovative quadruple exposure technology. This breakthrough has enabled ChangXin to reduce the half-pitch of the memory array's active area to a mere 11.95 nanometers. Additionally, it achieves an impressive storage capacitor aspect ratio of 45:1 and shrinks the height of the core functional area to 6762 nanometers. These advancements place the G5 platform on par with the industry's leading-edge process levels.
The commencement of mass production for this platform signifies a monumental achievement for ChangXin Memory Technologies in the realm of high-end storage technology. It propels the company forward in terms of storage density and offers the global storage industry a wealth of innovative solutions that are both cutting-edge and resilient to supply chain disruptions.