On August 31st, reports from South Korean media revealed that Samsung Electronics is currently in the process of developing an 8-layer, seventh-generation high-bandwidth memory (HBM4E) tailored specifically to meet NVIDIA's requirements. In a notable departure from the initially planned 12-layer and 16-layer configurations, this new design significantly reduces the stacking height of the memory modules. NVIDIA has set a speed specification target of 17-18Gbps for this memory, marking an approximate 20% increase over the speed achieved by Samsung's initial HBM4E samples, which operated at 14.4Gbps. This cutting-edge product is earmarked for utilization in NVHBM applications.