At a premier international event focused on computing architecture and chip design, Intel disclosed comprehensive details about its cutting-edge process technology, the Intel 18A-P. This technology integrates groundbreaking designs, including RibbonFET Gate-All-Around (GAA) transistors and backside power delivery networks, along with systematic optimizations across a range of voltage levels. These innovations result in substantial improvements in both performance and energy efficiency. At lower voltages, energy efficiency sees a notable boost, while at higher voltages, power supply losses are minimized, thereby unlocking greater frequency potential. To cater to diverse application needs, Intel has developed three device variants: W1, W1.5, and W3P.

Furthermore, Intel has enhanced its thermal management systems, introduced optimized interconnects featuring coarser metal layers, and pioneered ruthenium interconnects along with 3D logic stacking technology. The Intel 18A-P process is slated for initial deployment in the Diamond Rapids Xeon processor, which boasts up to 256 cores and optimized memory access, as well as the Nova Lake Core processor. Both processors are expected to hit the market in 2027. The GAA transistors and backside power delivery technology will form the cornerstone architecture for multiple future product lines.