In a preview of the Hot Chips 2026 conference, Sangwook Han, a Samsung Electronics executive, confirmed that the company will launch HBM4E high-bandwidth memory with a single-pin transmission rate of 16Gbps. Since late May this year, Samsung has begun supplying HBM4E products with a single-pin rate of 14Gbps, and now confirms its progress toward 16Gbps. Currently, Samsung's HBM4 products offer a single-pin rate of 11.7Gbps, indicating a significant improvement in transmission speed with HBM4E. Based on the 14Gbps specification, when a single HBM4E stack is equipped with 2048 pins, the theoretical maximum bandwidth can reach 3.6TB/s. After increasing the single-pin rate to 16Gbps, the maximum bandwidth per stack will rise to 4TB/s. In terms of capacity, Samsung currently offers HBM4E products with 12-layer stacking and a single-stack capacity of 48GB, and also plans to introduce 8-layer 32GB and 16-layer 64GB versions. Regarding manufacturing technology, Samsung's HBM4E utilizes sixth-generation 10-nanometer-class processes and incorporates a customized base die built on Samsung's 4-nanometer SF4 process.