On August 23, news emerged that Fujia Gallium has successfully cultivated a 6-inch gallium oxide single crystal ingot, boasting a uniform thickness of more than 70mm, through its unique vertical Bridgman (VB) technique. The Pinghu Laboratory's HRXRD tests confirmed its exceptional crystalline quality. Meanwhile, assessments by the National Institute of Metrology in China indicated that its electrical characteristics align with the substrate standards of the silicon carbide sector. The thickness of an ingot serves as a pivotal metric for gauging the advancement and industrial readiness of single crystal growth technology. Thicker ingots enable the production of a greater number of substrate wafers, ultimately driving down the cost per wafer.