In August 2026, Kioxia and SanDisk announced the launch of their tenth-generation BiCS10 3D QLC NAND flash memory chip, featuring a 332-layer stacked structure and an areal storage density of up to 37Gb/mm², making it the 3D NAND product with the highest storage density globally. The chip is equipped with a high-speed 4800MT/s interface and supports Independent Command Address (SCA) functionality, primarily targeting the high-capacity data center-grade SSD market. Compared to the previously released BiCS10 3D TLC NAND products from both companies (with an areal density exceeding 29Gb/mm²), the new QLC NAND further enhances storage density for data centers. Kioxia and SanDisk achieved a balance between storage density and performance in the 332-layer stack through CMOS Bonded to Array (CBA) and Optimal Pitch Selection (OPS) technologies, reducing read latency by approximately 4 microseconds and cutting read energy consumption by about 25%. Currently, sample deliveries of the product have commenced, with mass production scheduled for 2027. The first enterprise-grade PCIe Gen6 solid-state drive, the "KIOXIA CM10," has already provided samples to select customers, with capacities ranging from 2TB to 64TB.