An international research team led by Germany's Max Planck Institute for the Science of Light has proposed a novel design for photonic chips. This design overcomes the limitations of a single material by successfully integrating silicon nitride and silica into the same device. The team achieved Raman scattering on a silicon nitride integrated photonic platform for the first time and generated a broadband optical frequency comb covering a wavelength band of over 400 nanometers. This achievement provides new ideas for developing novel on-chip light sources and expanding the optical functions of photonic chips, with the relevant research published in the latest issue of the journal Advanced Photonics.