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SK Hynix Begins Supplying Samples of Next-Generation AI-Oriented Memory 'HBM4E' with 12-Layer Stacking
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Author：小编
On June 18, SK Hynix announced that it has delivered samples of 12-layer HBM4E to major customers. This product is a next-generation ultra-high-performance DRAM designed for AI, featuring a 12-layer stack of 32Gb 1cnm DRAM dies. It achieves a maximum pin speed of 16Gbps, a single-stack bandwidth of 4.0TB/s, a capacity of 48GB, and an energy efficiency improvement of over 20%, enhancing data processing capabilities for AI training and inference.
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