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Hesilicon Gains Two Patents, Bolstering SiC Technology Defenses
1 day ago /
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Author：小编
Recently, Hesilicon has made a fresh leap forward in its research and development endeavors concerning third-generation semiconductor technology. The company has successfully secured two national patent approvals: 'A Method for Manufacturing a SiC Semiconductor Component' (with Patent No.: ZL2021110482707.0) and 'Top Heat Dissipation Package Structure' (bearing Patent No.: ZL202530634689.2). These accomplishments further solidify Hesilicon's technological superiority in the realm of SiC power devices, aligning with common English expressions where "securing patents" and "bolstering defenses" are often used to convey the strengthening of a company's position through intellectual property.
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