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Associate Professor Yang Wen of South China University of Technology Achieves a String of Notable Breakthroughs in GaN Power Device Research, Published in Leading International Journals
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Author：小编
The research team helmed by Associate Professor Yang Wen from South China University of Technology has achieved remarkable strides in the exploration of Gallium Nitride (GaN) power devices. Their recent findings have been featured in esteemed international publications, including the IEEE Transactions on Power Electronics, Applied Physics Letters, and IEEE Transactions on Electron Devices. These studies delve into the physical mechanisms underlying the reliability of GaN power devices, intelligent modeling methodologies, and online monitoring technologies when subjected to extreme conditions, thereby establishing a comprehensive and self-contained technological framework.
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