On May 13th, Professor Liu Kai and his team from Tsinghua University’s School of Materials Science and Engineering unveiled an innovative all-solid-state ferroelectric gradient doping (FeGD) strategy. This method integrates the ferroelectric layer P(VDF-TrFE) with a two-dimensional ambipolar semiconductor MoTe₂ channel. By precisely modulating the ferroelectric polarization gradient distribution through gate voltage, the team successfully implemented 12 reconfigurable functions—such as non-volatile memory, artificial synapses, and in-memory logic—within a single-gate device architecture. In non-volatile memory mode, the device demonstrated an impressive retention time of up to 10⁷ seconds and a switching ratio exceeding 10⁶. For logic operations, the switching ratio reached over 10⁴ for basic logic gates and surpassed 10³ for complex logic functions, with a reconfiguration speed of under 1 millisecond. This breakthrough offers a promising new direction for developing highly integrated, multifunctional, and low-complexity reconfigurable electronic devices in the post-Moore era.