Samsung Electronics is rekindling its previously sluggish new semiconductor ventures, which encompass domains such as next-generation NAND flash memory and compound semiconductors. Its Device Solutions (DS) division has embarked on discussions aimed at reviving research and development (R&D) efforts and rekindling investment in cutting-edge semiconductor technologies. This includes formulating relatively well-defined investment blueprints for projects like ultra-high-rise NAND flash memory boasting over 400 layers, advanced packaging solutions, and substrates.

Previously, the progress of these novel ventures was impeded by the company's focus on restoring competitiveness in DRAM (Dynamic Random-Access Memory) and HBM (High Bandwidth Memory). However, with notable enhancements in the yield rates and capacity utilization of DRAM and HBM, coupled with a burgeoning market demand, the memory business has now achieved a state of stability. This newfound stability has paved the way for the resumption of investments in these innovative ventures. Nevertheless, the precise timeline for these investments remains a subject of uncertainty. It is anticipated that investment in these emerging growth sectors will gather momentum once the labor-management conflicts are effectively mitigated.