Recently, a research team helmed by Wang Sheng from the Carbon-Based Electronics Research Center at Peking University's School of Electronics, in a collaborative effort with the team led by Chang Lin from the same institution and the team under the guidance of Zheng Jun from the Semiconductor Institute of the Chinese Academy of Sciences, has made a significant leap forward in the realm of high-speed photodetectors. They have successfully engineered a silicon nitride (SiNx) waveguide-integrated carbon nanotube photodetector. This innovative device showcases exceptional photoelectric conversion capabilities, characterized by its high-speed operation, heightened sensitivity, and minimal dark current, across the dual communication bands of 1.55 μm and 2 μm. Notably, the detector's 3-dB bandwidth surpasses 67 GHz in both bands, establishing a fresh benchmark for high-speed photodetectors functioning within the 2 μm band. The pertinent research outcomes have been documented in an article titled 'Silicon Nitride Waveguide-Integrated Carbon Nanotube Photodetector Operating at 1.55 μm and 2 μm with Bandwidth Exceeding 67 GHz.'