The Z-Angle Memory (ZAM) next-generation memory project, a collaboration between Intel and SAIMEMORY, a subsidiary of SoftBank, has been selected and funded by Japan's New Energy and Industrial Technology Development Organization (NEDO) to accelerate R&D through government subsidies. The project is expected to run for approximately 3.5 years, with SAIMEMORY planning to invest around 8 billion yen to develop prototype products by fiscal 2027, aiming for mass production around 2029. ZAM memory consumes about 40% less power than traditional HBM, aiming to provide large-capacity, high-bandwidth, and low-power storage solutions for AI data centers and other applications.
