Sources indicate that Samsung’s DRAM chips produced using the 1dnm process—representing seventh-generation 10nm-class technology—have fallen short of anticipated yield rates during trial production. Consequently, Samsung has opted to indefinitely delay large-scale mass production until yield rates align with targeted benchmarks. To tackle this challenge, Samsung is considering a thorough review of its manufacturing processes aimed at enhancing yield efficiency.

Previously, Samsung had earmarked 1dnm process DRAM chips for integration into HBM5E, its ninth-generation HBM solution. Presently, Samsung’s 1cnm process DRAM chips are already deployed in HBM4, HBM4E, and HBM5, spanning three successive generations of HBM products. Moreover, Samsung has ramped up investment in 1dnm process DRAM chips and is in the process of constructing a new facility in South Korea. This state-of-the-art factory will not only manufacture DRAM chips but also oversee packaging, testing, logistics, and quality control operations.