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Dream of Overtaking SK Hynix Shattered: Samsung Rushes into High-End Memory but Stumbles on Basic Yield Rate
8 hour ago /
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Author：小编
Samsung's pursuit plan in the high-end memory sector has suffered a setback. Due to the key foundational technology, D1d DRAM, failing to meet internal yield targets, Samsung has decided to indefinitely postpone the mass production of its next-generation HBM5E memory. D1d DRAM represents Samsung's seventh-generation 10-nanometer-class process, originally planned for use in the ninth-generation HBM product, HBM5E, and is the core of future HBM solutions.
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