Samsung's Taylor Wafer Fab Commences 2nm Pilot Production
1 day ago / Read about 0 minute
Author:小编   

Samsung's strategic blueprint for advancing processes below the 3nm node is advancing seamlessly, with projections indicating that the yield rate for the 2nm Gate-All-Around (GAA) technology will hit the 60% mark. Building on this momentum, Samsung is set to embark on pilot production of its next-generation lithography technology at its Taylor facility in the United States. Initially constructed for 4nm wafer fabrication, Samsung has repurposed its overseas plant into a hub for 2nm process development, aiming to secure a competitive advantage over TSMC. Presently, TSMC is withholding its most cutting-edge 2nm technology from the U.S. market.