In March 2026, the School of Integrated Circuits at Beihang University achieved a significant milestone, with three research papers published simultaneously in Advanced Materials—a leading journal in materials science. These papers presented groundbreaking advances in several cutting-edge fields: the stabilization of three-dimensional topological magnetic textures via novel bulk interlayer Dzyaloshinskii-Moriya interaction (DMI) effects, the design and modulation of new antiferromagnetic materials, and the enhancement of light-controlled nonlinear transport phenomena.

Among these achievements, the research team introduced a novel approach by engineering in-plane atomic displacements and vertical thickness gradients in magnetic multilayer films through symmetry-breaking techniques. This enabled them to realize bulk interlayer DMI (BIL-DMI) for the first time, overcoming the inherent limitations of traditional DMI and offering a new degree of freedom for precise control of spin chirality.

Additionally, the team successfully identified a unique M-1 tetragonal antiferromagnetic phase in Mn₃GaN epitaxial films and, for the first time, observed a pronounced anomalous Hall effect in this magnetic phase—a discovery with significant implications for spintronics research.

Furthermore, in collaboration with teams from the Institute of Physics at the Chinese Academy of Sciences, the researchers constructed a high-quality two-dimensional electron gas system at the KTaO₃(111) interface. By incorporating light-field regulation techniques, they achieved a dramatic enhancement of the light-induced nonlinear Hall effect, demonstrating the potential for opto-spintronic applications.

These accomplishments underscore the School of Integrated Circuits’ deep expertise and innovative capabilities in advancing material mechanisms and their practical applications.