On April 1, Xidian University made a public announcement that Professor Hu Huiyong's research team has successfully developed a silicon-germanium-based single-photon avalanche diode (SPAD) chip. This development marks a substantial reduction in the manufacturing costs associated with short-wave infrared detection technology. Owing to this breakthrough, high-end chips, which previously cost thousands of dollars per unit, can now be integrated into civilian applications such as smartphones and automotive LiDAR systems at a mere fraction—just one percent—of their original cost.

Short-wave infrared technology offers a range of capabilities, including the ability to penetrate through smog, provide nighttime imaging, and identify materials. This technology holds immense potential across various domains, including low-light photography, autonomous driving, and industrial inspection.

Previously, mainstream solutions for short-wave infrared detection were heavily reliant on indium gallium arsenide materials. These materials incurred high costs due to their dependence on expensive indium phosphide substrates and their incompatibility with silicon-based CMOS processes.

Professor Hu Huiyong's team ingeniously combined silicon-germanium epitaxial processes with standard silicon-based CMOS technology. This innovative approach not only expanded the detection ranges to encompass the short-wave infrared band but also successfully overcame the material defects and leakage issues caused by the lattice mismatch between silicon and germanium. By doing so, the team has established a full-chain independent research and development capability.

Currently, the team is actively advancing the construction of a dedicated silicon-germanium foundry line. This facility is expected to be completed by the end of 2026 and will provide rapid validation and production capacity support for subsequent product iterations, further solidifying Xidian University's position at the forefront of domestic chip development.