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Reports indicate that Micron has kicked off a new research and development (R&D) project aimed at crafting GDDR memory products featuring a vertical stacking architecture. Leveraging the vertical stacking technology employed in HBM, this innovative product is poised to substantially boost the performance and capacity of conventional graphics memory. It has the potential to forge a novel pathway between standard GDDR and high-end HBM, thereby satisfying the market's appetite for high-performance yet cost-effective memory solutions. Micron has outlined plans to finalize equipment installation and transition into the process testing phase during the latter half of this year. The initial blueprint calls for the vertical stacking of four GDDR chip layers. Should the project progress without a hitch, the inaugural batch of test samples could make their debut as soon as 2027.
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