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On March 13th, news surfaced indicating that Samsung Electronics is joining forces with NVIDIA to speed up the development process of next-generation NAND flash memory chips. A collaborative team, comprising experts from the Samsung Semiconductor Research Institute, NVIDIA, and the Georgia Institute of Technology, has successfully crafted a 'Physics-Informed Neural Operator' model. This innovative model boasts an analysis speed for ferroelectric-based NAND devices that surpasses existing models by over 10,000 times, and the fruits of their research have been duly published. At present, Samsung is actively collaborating with NVIDIA to drive forward the commercialization of ferroelectric NAND flash memory, marking a significant stride in the tech industry.
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