The research team, spearheaded by Lu Shulong at the Suzhou Institute of Nano-tech and Nano-bionics, has achieved a notable breakthrough in the realm of gallium nitride (GaN)-based monolithic integrated devices. They have successfully integrated optical sensing and neuromorphic computing functionalities into a single device. Through an ingenious design approach, the researchers have constructed a double heterojunction structure within this singular device, enabling it to exhibit bidirectional photocurrent responses when exposed to light of varying wavelengths.

Moreover, leveraging electrochemical exfoliation technology, the team has, for the first time, accomplished the monolithic integration of a self-powered 360° omnidirectional GaN-based detector with an artificial synapse. This integration seamlessly blends the 'fast response' and 'slow relaxation' characteristics of the components.

This accomplishment not only boosts information processing efficiency and curtails system power consumption and latency but also lays a solid foundation of core hardware for the construction of high-speed, low-power, and highly integrated intelligent optoelectronic systems. Consequently, it propels the development of next-generation optoelectronic intelligent sensing and processing technologies, such as bionic vision chips and optical neuromorphic computing.

Furthermore, the team has verified the application potential of this innovative dual-function device in the field of humanoid robots. This verification demonstrates its ability to enhance the intelligent sensing and computing capabilities of humanoid intelligent robots while simultaneously reducing power consumption.