According to supply chain and social media reports, Qualcomm's next-generation Snapdragon 8 Elite Gen 6 series processor will adopt Samsung's Heat Pass Block (HPB) thermal dissipation technology to address heat accumulation issues during high-frequency operation. The HPB technology places a copper heat sink directly above the processor chip, with DRAM memory positioned on the side, avoiding the heat concentration problem caused by DRAM covering the processor in traditional stacked packaging. The high thermal conductivity of copper allows for rapid heat dissipation. Samsung data shows that after applying this technology to its Exynos 2600 chip, thermal resistance was reduced by approximately 16%. Compared to relying on external vapor chambers or graphite sheets added by smartphone manufacturers, HPB, as a chip-level built-in solution, is better suited for the compact internal space of smartphones. As mobile processor process nodes shrink to the 2nm era, thermal density issues are becoming increasingly prominent. HPB represents a new direction in thermal management for advanced packaging. Qualcomm's adoption of this technology reflects a shift in mobile chip thermal dissipation from passive external solutions to active internal ones, providing a practical thermal management path for next-generation flagship processors and helping maintain stable output in high-performance competition.