Recently, the research team from the Institute of Microelectronics Technology, School of Integrated Circuits and Electronics at Beijing Institute of Technology put forward the electrothermal co-transmission through-silicon via (TSV) technology. This groundbreaking work was not only accepted but also selected for an oral presentation at the 71st IEEE International Electron Devices Meeting (IEDM 2025). This achievement is particularly noteworthy as it marks the inaugural publication from Beijing Institute of Technology at IEDM in the over 70-year history of the conference. It represents a significant milestone, showcasing the university's remarkable progress in the realm of international electron devices.
