In the realm of magnetism, physicists harbor both great expectations and formidable challenges when it comes to antiferromagnetic materials. These materials boast superior stability and resistance to interference compared to the ferromagnetic materials commonly used in mobile phones and computers. Theoretically, antiferromagnetic materials are capable of operating up to a thousand times faster, making them prime candidates for the development of high-speed, low-power devices. The physics research team at Fudan University has made a significant advancement by employing their self-developed multimodal magneto-optical microscopy technique. Their research revealed that low-dimensional antiferromagnetic systems can undergo bistable collective switching under the influence of an external magnetic field, a behavior analogous to that of ferromagnets. This groundbreaking discovery not only refines the classical framework of magnetism theory but also opens up a novel avenue for the development of next-generation, low-power, high-speed computing chips.