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Achieving Ultimate Density! China's Breakthrough Paves the Way for Devices That 'Store More in Tighter Spaces'
1 day ago /
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Author：小编
Leveraging functional structures of ultra-small dimensions to boost device storage density, thereby enabling "more storage in less space," marks a pioneering frontier where material science converges with information technology. Recently, a research team from the Institute of Physics at the Chinese Academy of Sciences made a groundbreaking discovery: one-dimensional charged domain walls within fluorite-structured ferroelectric materials. These domain walls are incredibly thin and narrow, with their thickness and width measuring approximately one-hundred-thousandth of a human hair's diameter. This finding lays a solid scientific groundwork for the development of devices boasting extreme storage density.
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