Recently, the research team led by Academician Hao Yue from the Chinese Academy of Sciences and Professor Zhang Jincheng at Xidian University has made a remarkable technological breakthrough. This achievement successfully resolves a technical conundrum that has plagued the semiconductor materials field for nearly two decades. By employing an innovative approach, the team has managed to transform the previously 'island-like' interconnections between materials into seamless, atomically flat 'thin films.' This transformation has led to a substantial improvement in the heat dissipation efficiency of chips, thereby enhancing their overall performance.

This breakthrough is particularly significant as it tackles the prevalent heat dissipation issues encountered by semiconductors transitioning from the third to the fourth generation. Moreover, it offers a replicable and viable Chinese solution for achieving high-quality integration of semiconductor materials. The related research findings have garnered international recognition and have been published in the prestigious journals Nature Communications and Science Advances.