On January 17th, a report emerged stating that on January 13th, Xi'an University of Electronic Science and Technology made an announcement. The team, headed by Academician Hao Yue from the university, had successfully overcome a technical bottleneck in semiconductor materials that had persisted for 20 years. This breakthrough significantly boosts chip cooling efficiency and overall performance, offering a replicable Chinese approach for the high-quality integration of semiconductor materials. The relevant research results have been published in internationally renowned top-tier journals, Nature Communications and Science Advances.

Zhang Jincheng, the Vice President of Xi'an University of Electronic Science and Technology, highlighted that inadequate chip cooling can result in performance deterioration or even complete burnout. The team tackled the cooling challenge head-on and markedly enhanced the performance of semiconductor devices. They achieved this by injecting high-energy ions into the crystal of third-generation semiconductor chips. This process led to a smooth surface on the crystal nucleation layer and reduced the thermal resistance of the semiconductor to just one-third of its original value.