In domains such as communications infrastructure and data center power management, power systems are progressively transitioning towards higher operational frequencies, more compact form factors, and enhanced energy efficiency. Gallium nitride (GaN) devices, renowned for their exceptional electron mobility and switching prowess, have emerged as pivotal components in surmounting the constraints inherent in silicon-based power devices. To fully harness their capabilities, advanced driving solutions and packaging with minimal parasitic parameters are imperative. Addressing this need, Nitride Semiconductors has launched the low-voltage GaN driver integrated circuit (IC) DXC150LX070, available in three distinct FC-LGA 5×6 packaging configurations. This innovation streamlines system design while furnishing customers with a robust, dependable, and user-friendly core for high-frequency power switching applications.