The 71st International Electron Devices Meeting (IEDM 2025) took place in San Francisco, USA, from December 6 to 10. As a premier conference in the realm of microelectronic devices, IEDM 2025 attracted significant global attention from both the academic and industrial spheres. Peking University emerged as the institution with the most accepted papers at this year's IEDM Conference, boasting 21 papers that spanned diverse areas including advanced logic and memory technologies, novel information devices, low-dimensional integrated circuit materials and devices, as well as power devices. Notably, the 3D FeRAM solution and the world's inaugural BEOL-integrated multi-layer DRAM architecture, showcased by Changxin Memory Technologies Inc., underscored its innovative prowess in memory technology. Moreover, the Mobile Phone Department of Xiaomi Group, in partnership with Suzhou Inno-Chip High Power Semiconductor Co., Ltd. and the Hong Kong University of Science and Technology, unveiled a high-efficiency, low-voltage silicon-based gallium nitride RF power amplifier tailored for mobile terminals. This achievement marked a historic milestone in the application of gallium nitride technology within mobile terminal communications.