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Samsung Breaks Through DRAM Memory Technology Below 10nm
2025-12-17 /
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Author：小编
On December 16, Samsung and its Advanced Institute of Technology announced the successful development and manufacturing of DRAM technology with a feature size of less than 10nm. This technology employs a method where memory cells are stacked on top of peripheral circuits, known in short as Cell-on-Peri (CoP).
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