Search
Intel Reveals Three Innovative Transistor Materials Boasting a Leakage Rate 1,000 Times Lower
2 week ago /
Read about 0 minute
Author：小编
In the contemporary semiconductor sector, a prevalent objective is to miniaturize transistors and drive forward cutting-edge process technologies. The crux of this endeavor lies in the discovery of more optimal transistor materials. At the 2025 IEEE International Electron Devices Meeting (IEDM), Intel, along with its foundry division, presented three highly promising MIM (Metal-Insulator-Metal) stacked materials: ferroelectric hafnium zirconium oxide (HZO), titanium oxide (TiO), and strontium titanate (STO).
-
C114 Communication Network -
Communication Home
7 X 24 Track global technological trends
