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South Korean media outlets have reported that Samsung Electronics is contemplating a significant reduction in its production capacity of 1a nm process DRAM for HBM3E memory, with projections indicating a cutback of 30% to 40%. Concurrently, Samsung is gearing up to boost its production capacity of the 1b nm process for standard memory offerings, including DDR5 and LPDDR5x, through a strategic process conversion. This move is aimed at optimizing profitability in light of shifting market supply-demand dynamics.
Recently, prices for general-purpose memory products, such as DDR5, have witnessed an upward trajectory, resulting in profitability levels that now outstrip those of HBM3E. Should Samsung proceed with this plan, its monthly production capacity for the 1b nm process is anticipated to surge by an additional roughly 80,000 wafers.
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