Based on data from Tianyancha, DriveTech (Shanghai) Co., Ltd. has secured a patent for its invention titled “Power Semiconductor Module Featuring Double-Sided Heat Dissipation and a Hollow Structure.” The official authorization announcement number for this patent is CN115547954B. The patent was officially announced on October 17, 2025, with the original application submitted on October 20, 2022.

This innovative power semiconductor module is composed of an upper substrate and a lower substrate, which are stacked on top of each other. The lower substrate is fitted with a DC positive terminal, while the upper substrate is equipped with a DC negative terminal. Within the lower substrate, there are multiple upper-arm chips and lower-arm chips, separated by a first spacer.

The upper substrate itself is a multi-layer structure, comprising an upper-surface metal layer, an insulating dielectric layer, and a lower-surface metal layer. Notably, at the location corresponding to the lower-arm chips, there is a specially designed hollow area. This hollow area contains only the lower-surface metal layer and extends through the edge of one end of the upper substrate.

This unique design allows the commutation loop current to flow in a specific path: it enters the module through the DC positive terminal, passes through the upper and lower-arm chips, and then exits via the hollow area. This optimized current path significantly reduces the stray inductance of the commutation loop, enhancing the overall performance of the power semiconductor module.