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On October 29th, Guobo Electronics made an announcement stating that, in partnership with a premier domestic terminal manufacturer, it has developed a silicon-based gallium nitride power amplifier chip. This chip has undergone specialized optimization for use in terminal devices, notably mobile phones. By successfully bridging the market void for silicon-based gallium nitride power amplifier terminals in RF (Radio Frequency) applications, this innovation stands as a milestone. It represents the inaugural instance of achieving mass production and delivery of such a chip within the terminal RF sector. Presently, the chip has garnered certification from a prominent domestic terminal manufacturer, with mass production shipments surpassing the 1 million-unit mark.
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