Sanan Integrated's New-Gen GaAs RF Process Speeds Up High-Frequency Application Commercialization
2025-10-16 / Read about 0 minute
Author:小编   

In a bid to address customer demands, Sanan Integrated has unveiled its 0.4μm Ledge GaAs HBT process, named H10HP56. This innovative process facilitates higher operational frequencies, catering to the high-power application needs of devices operating within the C-band spectrum. It places a strong emphasis on delivering outstanding amplification efficiency and stability, particularly in areas such as smartphones, Wi-Fi 7, and satellite communications.