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Peric Semiconductor Forms Strategic Partnership with Xi'an Research Institute of High Voltage Apparatus for Collaborative Development and Manufacturing of Medium and High Voltage IGBT Power Devices
2025-09-02 /
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Author：小编
Peric Semiconductor has entered into a strategic cooperation agreement with the Xi'an Research Institute of High Voltage Apparatus, aiming to jointly develop and manufacture power devices, particularly focusing on medium and high voltage Insulated Gate Bipolar Transistors (IGBTs). In this partnership, the Xi'an Research Institute will take charge of the research, development, design, and production testing of IGBT chips. Meanwhile, Peric Semiconductor will concentrate on advancing high-voltage IGBT packaging technology, enhancing production scale and automation, and achieving large-scale manufacturing capabilities.
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