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RDI Achieves Breakthrough with Complementary Vertical Field-Effect Transistor (CVFET) Development
2 week ago /
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Author：小编
According to the latest International Roadmap for Devices and Systems (IRDS 2023), the Complementary Field-Effect Transistor (CFET) has emerged as the frontrunner in next-generation transistor architectures, succeeding FinFET and horizontal Gate-All-Around (GAA) designs. By innovatively stacking NMOS and PMOS devices vertically, CFET disrupts the conventional planar or horizontal layout of FinFET/GAA, thereby achieving remarkable integration density and performance enhancements within a more compact footprint.
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