IMEC and Ghent University have announced a significant breakthrough in 3D DRAM technology, successfully achieving the epitaxial growth of 120 layers of Si/SiGe stack on a 300mm silicon wafer. This milestone offers innovative solutions to meet the high-capacity storage demands of AI and High-Performance Computing (HPC), heralding promising prospects for the commercialization of 3D DRAM and poised to have a profound impact on the semiconductor industry.