A groundbreaking advancement in the realm of brain-inspired neuromorphic devices has been achieved by a research team led by Professor Shi Yuanyuan at the University of Science and Technology of China (USTC). The team has innovatively crafted electrolyte-gated WSe₂ thin-film transistors featuring dual relaxation time scales, which are being harnessed in physical reservoir computing. This innovation effectively addresses the limitation of traditional dynamic memristors, which suffer from a single temporal characteristic scale in temporal signal processing.