On August 4 (local time), Samsung Electronics unveiled its next-generation storage technology roadmap for AI infrastructure at the 2026 Future of Memory and Storage Summit (FMS). During the event, Samsung showcased the zHBM and zNAND-O concept products for the first time, and introduced the V10 BV-NAND with over 400 layers using wafer bonding technology. Samsung explained that zHBM shortens the data transmission distance between the processor and memory by vertically stacking HBM on top of the AI accelerator, thereby enhancing AI training and inference performance. The zHBM, equipped with a next-generation interface system, is expected to deliver 8 times the performance and over 10 times the memory density of HBM5, while offering higher energy efficiency.